J112 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
View to exact match
J112 Datasheet PDF : 2 Pages
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20 STERN ME.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
N-channel silicon field-effect transistors
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
• High speed switching
• Interchangeability of drain and
source connections
• Low RDS on atzero Qate voltage
PINNING
1 = gate
2 = source
3 = drain
Note: Drain and source are
interchangeable.
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Drain current
VDS=15V;VGS = 0
Total power dissipation
up to Tamb = 50 °C
Gate-source cut-off voltage
VDS = 5 V; ID = 1 uA
Drain-source on-state resistance
VDS = 0.1 V;VGS = 0
±VDS
max.
IDSS
m'n-
Ptot
~VGSoff
max.
min.
max.
RDS on
max-
J111
40
J112
40
J113
40 V
20
5
2 mA
400
400
400 mW
3
1
0.5 V
10
5
3V
30
50
100 n
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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