2SK1070PIDTL-E View Datasheet(PDF) - Renesas Electronics
Part Name
Description
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2SK1070PIDTL-E Datasheet PDF : 5 Pages
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2SK1070
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Gate cutoff current
IGSS
—
—
–10
nA VGS = –15 V, VDS = 0
Gate to source breakdown voltage V(BR)GSS –22
—
Drain current
IDSS*1
12
—
—
V IG = –10 µA, VDS = 0
40
mA VDS = 5 V, VGS = 0, Pulse test
Gate to source cutoff voltage
VGS(off)
0
—
–2.5
V VDS = 5 V, ID = 10 µA
Forward transfer admittance
|yfs|
20
30
—
mS VDS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
9
—
pF VDS = 5 V, VGS = 0, f = 1 MHz
Notes: 1. The 2SK1070 is grouped by IDSS as follows.
Grade
C
D
E
Mark
PIC
PID
PIE
IDSS
12 to 22
18 to 30
27 to 40
Main Characteristics
Maximum Channel Dissipation Curve
150
100
50
Typical Output Characteristics
20
VGS = 0 V
16
–0.1
12
–0.2
–0.3
8
–0.4
–0.5
4
–0.6
0
50
100
150
Ambient Temperature Ta (ºC)
Typical Transfer Characteristics
20
VDS = 5 V
16
12
8
4
0
–1.25 –1.0 –0.75 –0.5 –0.25 0
Gate to Source Voltage VGS (V)
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Drain Current
100
VDS = 5 V
f = 1 kHz
10
1.0
0.1
0.1
1.0
10
100
Drain Current ID (mA)
Rev.2.00, Mar.14.2005, page 2 of 4
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