CS4N60F A9TDY
○R
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Maximum Pulsed Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Pulse width tp≤300µs,δ≤2%
Test Conditions
IS=4.0A,VGS=0V
IS=4.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
--
4
-- 16
-- 1.5
250 --
1180 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
Units
4.17
℃/W
100
℃/W
Gate-source Zener diode
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Units
V
a1:Repetitive rating; pulse width limited by maximum junction temperature
a2:L=10mH, ID=6.3A, Start TJ=25℃
a3:ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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