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CS4N60FA9TDY View Datasheet(PDF) - Unspecified

Part Name
Description
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CS4N60FA9TDY
ETC
Unspecified ETC
CS4N60FA9TDY Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Silicon N-Channel Power MOSFET
R
CS4N60F A9TDY
General Description
CS4N60F A9TDY, the silicon N-channel
Enhanced VDMOSFETs, is obtained by the self-aligned
planar Technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220F, which
accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 13nC)
l Low Reverse transfer capacitances(Typical: 2.2pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
600
ID
4
PD(TC=25)
30
RDS(ON)Typ
2.0
Rating
600
4
3.2
16
±30
200
30
2.5
5.0
30
0.24
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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