FCD5N60TF View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FCD5N60TF Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FCD5N60
FCD5N60
FCU5N60
Device
FCD5N60TM
FCD5N60TF
FCU5N60
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
--
Tape Width
16mm
16mm
--
Quantity
2500
2000
70
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
600
VGS = 0V, ID = 250µA, TJ = 150°C
--
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 4.6A
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
VDS = 480V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 2.3A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 2.3A
(Note 4) --
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
--
f = 1.0MHz
--
--
VDS = 480V, VGS = 0V, f = 1.0MHz
--
VDS = 0V to 400V, VGS = 0V
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300V, ID = 4.6A
RG = 25Ω
VDS = 480V, ID = 4.6A
VGS = 10V
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.6A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 4.6A
dIF/dt =100A/µs
--
--
--
--
(Note 4)
--
Typ
--
650
0.6
700
--
--
--
--
--
0.81
3.8
470
250
22
12
32
12
40
47
22
16
2.8
7
--
--
--
295
2.7
Max Units
--
V
--
V
-- V/°C
--
V
1
µA
10
µA
100 nA
-100 nA
5.0
V
0.95 Ω
--
S
600 pF
320 pF
--
pF
--
pF
--
pF
30
ns
90
ns
95
ns
55
ns
--
nC
--
nC
--
nC
4.6
A
13.8 A
1.4
V
--
ns
--
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4.6A, di/dt ≤ 1200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCD5N60/FCU5N60 Rev. A0
2
www.fairchildsemi.com
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