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FX70SMJ-03 View Datasheet(PDF) - Powerex

Part Name
Description
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FX70SMJ-03 Datasheet PDF : 4 Pages
1 2 3 4
PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
–10
Tch = 25°C
ID = –70A
–8
VDS = –10V
–6
–20V
–25V
–4
–2
0
0
40 80 120 160 200
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
–100
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VGS = 0V
Pulse Test
–80
–60
–40
TC = 25°C
75°C
125°C
–20
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = –10V
5
4
ID = 1/2ID
Pulse Test
3
2
100
7
5
4
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
–4.0
–3.2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VDS = –10V
ID = –1mA
–2.4
–1.6
–0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100 D = 1.0
7
5 0.5
3 0.2
2
PDM
0.1
10–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–210–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Jan.1999
 

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