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MRF177 View Datasheet(PDF) - Motorola => Freescale

Part NameDescriptionManufacturer
MRF177 100 W, 28 V, 400 MHz N?CHANNEL BROADBAND RF POWER MOSFET Motorola
Motorola => Freescale Motorola
MRF177 Datasheet PDF : 6 Pages
1 2 3 4 5 6
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic (1)
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
1.0
Drain–Source On–Voltage
(VGS = 10 V, ID = 3.0 A)
VDS(on)
Forward Transconductance
(VDS = 10 V, ID = 2.0 A)
gfs
1.8
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
FUNCTIONAL CHARACTERISTICS (Figure 8) (2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
GPS
10
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
η
55
Electrical Ruggedness
ψ
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,
Load VSWR = 30:1, All Phase Angles At Frequency of Test)
(1) Note each transistor chip measured separately
(2) Both transistor chips operating in push–pull amplifier
Typ
Max
Unit
Vdc
2.0
mAdc
1.0
µAdc
3.0
6.0
Vdc
1.4
Vdc
2.2
mhos
100
pF
105
pF
10
pF
12
dB
60
%
No Degradation
in Output Power
Before & After Test
MRF177
2
MOTOROLA RF DEVICE DATA
Direct download click here

 

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