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MRF177 View Datasheet(PDF) - Motorola => Freescale

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MRF177 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
Typical Performance at 400 MHz, 28 V:
Output Power — 100 W
Gain — 12 dB
Efficiency — 60%
2
Low Thermal Resistance
Low Crss — 10 pF Typ @ VDS = 28 Volts
6
Ruggedness Tested at Rated Output Power
5, 8
7
1, 4
Nitride Passivated Die for Enhanced Reliability
Excellent Thermal Stability; Suited for Class A
Operation
3
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF177/D
MRF177
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 744A–01, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VDSS
65
VDGR
65
VGS
±40
ID
16
PD
270
1.54
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
TJ
200
Characteristic
Symbol
Max
Thermal Resistance, Junction–to–Case
RθJC
0.65
(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF177
1
 

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