K1010 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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K1010

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

2SK1010

DESCRIPTION

·Drain Current –ID=6A@ TC=25℃

·Drain Source Voltage-

: VDSS= 500V(Min)

APPLICATIONS

·Designed for high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL ARAMETER

VALUE UNIT

VDSS

VGS

ID

Ptot

Tj

Tstg

Drain-Source Voltage (VGS=0)

500

V

Gate-Source Voltage

±30

V

Drain Current-continuous@ TC=25℃

6

A

Total Dissipation@TC=25℃

80

W

Max. Operating Junction Temperature

150

℃

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

1.56

Thermal Resistance,Junction to Ambient 75

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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