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FDN308P View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
FDN308P
Twtysemi
TY Semiconductor Twtysemi
FDN308P Datasheet PDF : 2 Pages
1 2
SMD Type
Product specification
FDN308P
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA
–20
Breakdown Voltage Temperature
Coefficient
ID = –250 µA,Referenced to 25°C
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA,Referenced to 25°C
–0.6
VGS = –4.5 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.3 A
VGS = –4.5 V, ID = –1.5A TJ=125°C
VGS = –4.5 V, VDS = –5 V
–5
VDS = –5 V,
ID = –1.5 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6
VDS = –10V,
VGS = –4.5 V
ID = –1.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –0.42 (Note 2)
Voltage
–13
–1.0
3
86
136
114
12
341
83
43
8
10
12
8
3.8
0.8
1.0
–0.7
V
mV/°C
–1
µA
100 nA
–100 nA
–1.5
V
mV/°C
125 m
190
178
A
S
pF
pF
pF
16
ns
20
ns
22
ns
16
ns
5.4
nC
nC
nC
–0.42 A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123 2of 2
 

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