PEMB11 View Datasheet(PDF) - NXP Semiconductors.
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Description
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NXP Semiconductors
PEMB11; PUMB11
PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base
cut-off current
VCB = 50 V; IE = 0 A
ICEO
collector-emitter
VCE = 30 V; IB = 0 A
cut-off current
VCE = 30 V; IB = 0 A;
Tj = 150 C
IEBO
emitter-base
cut-off current
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
off-state input
voltage
VCE = 5 V; IC = 100 A
VI(on)
on-state input
voltage
VCE = 0.3 V; IC = 10 mA
R1
bias resistor 1 (input)
R2/R1 bias resistor ratio
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
fT
transition frequency VCB = 5 V; IC = 10 mA;
f = 100 MHz
[1] Characteristics of built-in transistor.
Min Typ Max Unit
-
-
100 nA
-
-
1 A
-
-
5 A
-
-
400 A
30 -
-
-
-
150 mV
-
1.1 0.8 V
2.5 1.8 -
V
7
10 13 k
0.8 1.0 1.2
-
-
3
pF
[1] -
180 -
MHz
PEMB11_PUMB11
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 30 November 2011
© NXP B.V. 2011. All rights reserved.
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