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TE28F256J3D-95 View Datasheet(PDF) - Intel

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TE28F256J3D-95 Datasheet PDF : 66 Pages
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Intel® Embedded Flash Memory (J3 v. D)
6.0
Electrical Characteristics
6.1
DC Current Specifications
Table 7.
DC Current Characteristics (Sheet 1 of 2)
VCCQ
2.7 - 3.6V
VCC
2.7 - 3.6V
Test Conditions
Notes
Symbol
Parameter
Typ Max Unit
ILI
Input and VPEN Load Current
±1
ILO
Output Leakage Current
±10
32, 64, 128, 256 50 120
Mbit
ICCS VCC Standby Current
32, 64, 128, 256
0.71 2
Mbit
ICCD VCC Power-Down Current
50 120
ICCR
VCC Page Mode Read Current
4-Word
Page
15 20
24 29
10 15
8-Word Page
30 54
ICCW
VCC Program or Set
Lock-Bit Current
35 60
40 70
μA
VCC = VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
μA VCC= VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
CMOS Inputs, VCC = VCC Max; Vccq =
VccqMax
μA Device is disabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31),
RP# = VCCQ ± 0.2 V
TTL Inputs, VCC = VCC Max,
Vccq = VccqMax
mA Device is disabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31), RP# = VIH
μA RP# = GND ± 0.2 V, IOUT (STS) = 0 mA
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max
mA Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
f = 5 MHz, IOUT = 0 mA
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max
mA Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
f = 33 MHz, IOUT = 0 mA
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
mA Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
f = 5 MHz, IOUT = 0 mA
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
mA Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
f = 33 MHz, IOUT = 0 mA
mA CMOS Inputs, VPEN = VCC
mA TTL Inputs, VPEN = VCC
1
1
1,2,3
1,3
1,4
Datasheet
20
December 2007
Document Number: 316577-006
 

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