XBS104V14 View Datasheet(PDF) - TOREX SEMICONDUCTOR
Part Name
Description
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| XBS104V14 Datasheet PDF : 0 Pages | |||
XBS104V14
Schottky Barrier Diode, 1A, 40V Type
ETR1610-001
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: VF=0.365V (TYP.)
: IF(AV)=1A
: VRM=40V
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
40
V
Reverse Voltage (DC)
VR
40
V
Forward Current (Average)
IF(AV)
1
A
Non Continuous
Forward Surge Current*1
IFSM
20
A
Junction Temperature
Tj
125
℃
Storage Temperature Range
Tstg
-55〜+150 ℃
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
■MARKING RULE
①: 0 (Product Number)
②: Assembly Lot Number
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
Cathode Bar
SOD-123A
Unit : mm
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS104V14□*
R : Embossed tape, standard feed
* □ Please put the device orientation type “R”.
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2：trr measurement circuit
Bias
VF1
IF=100mA
VF2
IF=500mA
VF3
IF=1A
IR
VR=40V
Ct
VR=1V , f=1MHz
trr
IF=IR=10mA , irr=1mA
Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.23
0.30
0.365
0.25
150
41
Ta=25℃
MAX.
0.315
0.385
0.41
2
-
-
UNIT
V
V
V
mA
pF
ns
1/3
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