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FDC2512 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
FDC2512
ON-Semiconductor
ON Semiconductor ON-Semiconductor
FDC2512 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics
Symbl
Parameter
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 120 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
150
V
147
mV/°C
1
µA
100
nA
–100 nA
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
2 2.6
4
V
–5.6
mV/°C
VGS = 10 V, ID = 1.4 A
VGS = 6.0 V, ID = 1.3 A
VGS = 10 V, ID = 1.4 A, TJ = 125°C
319 425 m
332 475
624 875
VGS = 10 V, VDS = 5 V
4
A
VDS = 10 V, ID = 1.4 A
4
S
VDS = 75 V,
f = 1.0 MHz
V GS = 0 V,
344
pF
22
pF
9
pF
0.1 1.4 3.0
Ω
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 75 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 75 V,
VGS = 10 V
ID = 1.4 A,
6.5 13
ns
3.5
7
ns
22 33
ns
4
8
ns
8
11
nC
1.5
nC
2.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
0.8 1.2
V
trr
Diode Reverse Recovery Time
IF = 1.4A,
45.8
nS
Qrr
Diode Reverse Recovery Charge diF/dt = 300 A/µs
(Note 2)
119
nC
Notes:
1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. EAS of 13.5 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V.
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2
Scale 1 : 1 on letter size paper
 

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