2SD1047 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

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2SD1047

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A

VBE

Base-emitter on voltage

IC=1A;VCE=5V

ICBO

Collector cut-off current

VCB=80V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=5V

COB

Collector output capacitance

f=1MHz;VCB=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=1.0A; IB1=-IB2=0.1A

VCC=20V ,RL=20B

hFE-1 Classifications

D

E

60-120

100-200

Product Specification

2SD1047

MIN TYP. MAX UNIT

140

V

160

V

6

V

2.5

V

1.5

V

0.1

mA

0.1

mA

60

200

20

15

MHz

210

pF

0.26

µs

6.88

µs

0.68

µs

2

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