2SD1047E View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SD1047E

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

isc Product Specification

2SD1047E

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 140V(Min)

·Good Linearity of hFE

·High Current Capability

·Wide Area of Safe Operation

·Complement to Type 2SB817E

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Designed for audio frequency amplifier output

stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

VCEO

VEBO

IC

ICP

PC

TJ

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

Junction Temperature

160

V

140

V

6

V

12

A

15

A

100

W

150

℃

Tstg

Storage Temperature Range

-40~150

℃

isc website：www.iscsemi.com

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