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STD4NK60Z-1_08 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STD4NK60Z-1_08 Datasheet PDF : 20 Pages
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STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 - D²PAK
DPAK-IPAK-I²PAK
TO-220FP
Unit
VDS
VGS
ID
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
600
± 30
4
2.5
16
70
0.56
3000
4.5
4 (1)
2.5 (1)
16 (1)
25
0.2
V
V
A
A
A
W
W/°C
V
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC = 25 °C)
Tstg Storage temperature
Tj
Max operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 4 A, di/dt 200 A/µs, VDD V(BR)DSS, TJ TJMAX.
-
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Value
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
TO-220
D²PAK
I²PAK
DPAK
IPAK
Unit
TO-220FP
1.78
62.5
100
5
°C/W
62.5 °C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID=IAR, VDD= 50 V)
Value
Unit
4
A
120
mJ
3/20
 

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