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LF151DT_08 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
LF151DT_08 Wide bandwidth single JFET operational amplifiers ST-Microelectronics
STMicroelectronics ST-Microelectronics
LF151DT_08 Datasheet PDF : 14 Pages
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Electrical characteristics
3
Electrical characteristics
LF351
Table 3.
Symbol
Electrical characteristics at VCC = ±15 V, Tamb = +25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Unit
Vio
DVio
Iio
Iib
Avd
SVR
ICC
Vicm
Input offset voltage (Rs = 10kΩ)
Tmin Tamb Tmax
Input offset voltage drift
Input offset current (1)
Tmin Tamb Tmax
Input bias current (1)
Tmin Tamb Tmax
Large signal voltage gain (RL = 2kΩ, Vo = ±10V)
Tmin Tamb Tmax
Supply voltage rejection ratio (RS = 10kΩ)
Tmin Tamb Tmax
Supply current, no load
Tmin Tamb Tmax
Input common mode voltage range
3 10
13
10
5 100
4
20 200
20
50 200
25
80 86
80
1.4 3.4
3.4
±11 +15
-12
mV
µV/°C
pA
nA
pA
nA
V/mV
dB
mA
V
CMR
IOS
±Vopp
SR
tr
Kov
GBP
Ri
THD
en
m
Common mode rejection ratio (RS = 10kΩ)
Tmin Tamb Tmax
Output short-circuit current
Tmin Tamb Tmax
Output voltage swing
RL = 2kΩ
RL = 10kΩ
Tmin Tamb Tmax
RL = 2kΩ
RL = 10kΩ
Slew rate, Vi = 10V, RL = 2kΩ, CL = 100pF, unity gain
Rise time, Vi = 20mV, RL = 2kΩ, CL = 100pF, unity gain
Overshoot, Vi = 20mV, RL = 2kΩ, CL = 100pF, unity gain
Gain bandwidth product, f = 100kHz, Vin = 10mV, RL = 2kΩ, CL = 100pF
Input resistance
Total harmonic distortion
f= 1kHz, Av= 20dB, RL= 2kΩ, CL=100pF, Vo= 2Vpp
Equivalent input noise voltage
RS = 100Ω, f = 1KHz
Phase margin
70 86
dB
70
10 40 60
mA
10
60
10 12
12 13.5
10
12
12 16
0.1
10
2.5 4
1012
0.01
15
45
V
V/µs
µs
%
MHz
Ω
%
---n---V-----
Hz
Degrees
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
temperature.
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