Diode Semiconductor Korea
SB020 --- SB040
FIG.1 -- FORWARD CURRENT DERATING CURVE
0.8
Resistive or
Inductive Load
0.375"(9.5mm)
0.6
Lead Length
0.4
0.2
0
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE,
FIG.3 --TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
TJ=125℃
1
0.1
Pulse width=300 s
1% Duty Cycle
TJ=25℃
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5--TYPICAL JUNCTION CAPACITANCE
400
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
100
10
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
FIG.2 --MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
30
25
TJ=TJMAX
20
8.3ms Single Half
Sine-Wave
25
10
5
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
100
10
1
0.1
TJ=125℃
TJ=75℃
0.01
0.001
0
TJ=25
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION,Sec.
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