BDX18 View Datasheet(PDF) - New Jersey Semiconductor
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BDX18 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973)376-8960
BDX1S-BDX1SN
PNP SILICON TRANSISTORS, EPITAXIAL BASE
TRANSISTORS PNP SIL1CIUM, BASE fPI TAXItE
LF large iigrul power impljfiution
Amplification Bf grands signaux elf puissanct
High currant switching
Commutation fort courant
. ndwljn
Variation de dissipation
100%
\s \
75
50
\0
25
0
100
c
VCEO
IC
Ptot
th(i"c)
h2i£ 14 A)
fy
V
- TO v
-ISA
117 W
* C/W nwx
20 - 70
4 MHz min
** T O 3 I C B 1 B )
BOititr
ISO T W\ /^nf^*
^\— l
MS.(OC)
J
^
^
ABSOLUTE RATINGS ILIMITING VALUES)
VALEURS LiMirESABSouuesD'UTiLisATioN
^OtlKlOr^MH V0lt89«
J>ni/on coflKHur-tMM
collector-emittir voltage
^Miior) collKteur-imettfur
""Klor-emitttr volugt
J^on collKtnr-tmttmir
H B E = 1 oo n
ul»Kttjr.emitt«r voltaqt
.^*=r, cD««»0^m.rr.Ur
VBE = + 1 .S V
1 filter -bait voltag*
L^"»wn 6mtttwr-bf**
«»Ktor current
f-S^"' co/ltcmir
-» current
u^-t/uftas*
J"* duumtion
•>»Mr/o/, a, PU/B.OM
"oiieZS C
^UI*ge and junction temperature
max
'""Otorurt 40 ionction « a* uockagt
VCBO
VCEO
VCER
VCEX
VEBO
ic
>B
Ptot
'i
T«9
ctian-ciM thffm.il rttittinc*
l)"»V»ruf» thermiqu* junction boititr m"1
Rth(j^ct
BOX 11
-100
-60
-70
-90
-7
-15
-7
117
20U
-65+200
BOX IB N
-7«
-80
-8B
-70
-7
-15
^ -7
117
^W
-66+200
,,
1,9
V
V
V
V
V
A
A
W
°C
J
°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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