B120 View Datasheet(PDF) - Diode Semiconductor Korea
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B120 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
B120 - - - B160
FIG.1 -- FORWARD DERATING CURVE
1.0
Resistive or
inductive Load
0.5
0
50
P.C.B.MOUNTED ON
0.2X0.2(5.0X5.0mm)
COPPERPAD AREAS
60 70 80 90 100 110 120 130 140 150 160 170
LEAD TEMPERATURE ℃
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
50
TJ=125OC
10
TJ=100OC
1
Puise Width=300 S
1%DUTY CYCLE
0.1
TJ=25OC
0.01
0
B120-B140
B150-B160
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2-- PEAK FORWARD SURGE CURRENT
50
40
TL=100 OC
8.3ms Single Half Sine-Wave
(JEDEC Method)
30
20
10
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
1
B120-B140
B150-B160
TJ=1250C
0.1
T J=75 0C
0.01
0.001
0
TJ=25 0C
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,％
FIG.5--TYPICAL JUNCTION CAPACITANCE
400
100
TJ=25 0 C
f=1.0MHz
Vsig=50mVp-p
10
0.1
B120-B140
B150-B160
1
10
100
REVERSE VOLTAGE,VOLTS
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