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2SB1216 View Datasheet(PDF) - ON Semiconductor

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Description
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2SB1216 Datasheet PDF : 0 Pages
2SB1216, 2SD1816
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=()100V, IE=0A
()1 μA
Emitter Cutoff Current
IEBO
VEB=()4V, IC=0A
()1 μA
DC Current Gain
hFE1
hFE2
VCE=()5V, IC=()0.5A
VCE=()5V,IC=()3A
140*
40
400*
Gain-Bandwidth Product
fT
VCE=()10V, IC=()0.5A
(130) 180
MHz
Output Capacitance
Collector to Emitter Saturation
Voltage
Cob
VCE(sat)
VCB=()10V, f=1MHz
IC=()2A, IB=()0.2A
(65) 40
pF
(200) 150 (500) 400 mV
Base to Emitter Saturation Voltage
VBE(sat)
IC=()2A, IB=()0.2A
() 0.9
() 1.2 V
Collector to Base Breakdown
Voltage
V(BR)CBO
IC=()10μA, IE=0A
()120
V
Collector to Emitter Breakdown
Voltage
V(BR)CEO
IC=()1mA, RBE=
()100
V
Emitter to Base Breakdown Voltage V(BR)EBO
IE=()10μA, IC=0A
() 6
V
Turn-On Time
Storage Time
Fall Time
ton
tstg
See specified Test
Circuit
tf
100
ns
(800) 900
ns
50
ns
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows:
Rank
S
T
hFE
140 to 280
200 to 400
Fig.1 Switching Time Test Circuit
www.onsemi.com
2
 

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