2SD1119 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name

Description

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2SD1119

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SD1119 TRANSISTOR (NPN)

FEATURES

z Low collector-emitter saturation voltage VCE(sat)

z Satisfactory operation performances at high efficiency with the low

voltage power supply.

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction Temperature

Storage Temperature

Value

40

25

7

3

500

150

-55~150

Unit

V

V

V

A

mW

℃

℃

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

Symbol

Test conditions

V(BR)CBO IC =100μA, IE=0

V(BR)CEO IC =1mA, IB=0

V(BR)EBO IE=10μA, IC=0

ICBO

VCB=10V, IE=0

IEBO

VEB=6V, IC=0

hFE(1) VCE=2V, IC=500mA

hFE(2) VCE=2V, IC=2A

VCE(sat) IC=3A, IB=0.1A

fT

VCE=6V, IC=50mA, f=200MHz

Cob

VCB=20V, f=1MHz

Q

230-380

TQ

Min Typ Max Unit

40

V

25

V

7

V

0.1

μA

0.1

μA

230

600

150

1

V

150

MHz

50

pF

R

340-600

TR

www.cj-elec.com

1

C,Oct,2015

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