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TGA2567-SM View Datasheet(PDF) - TriQuint Semiconductor

Part Name
Description
View to exact match
TGA2567-SM
TriQuint
TriQuint Semiconductor TriQuint
TGA2567-SM Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
6V
Drain to Gate Voltage
(VD-VG1)
8V
Gate Voltage Range (VG1)
Gate Voltage Range (VG2)
Drain Current (ID)
Gate Current (IG1, IG2)
Power Dissipation (PDISS)
RF Input Power, CW, 50 Ω,
T = 25 °C (PIN)
Channel Temperature (TCH)
-2 to 1 V
-2 to +4 V
160 mA
-1 to 40 mA
2.8 W
+22 dBm
200 °C
Mounting Temperature
(30 Seconds)
260 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
TGA2567-SM
2-20 GHz LNA Amplifier
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
5V
Drain Current (IDQ)
100 mA
Gate Voltage (VG1)
-0.7 V (Typ.)
Gate Voltage (VG2)
1.3 V
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 5 V, IDQ = 100 mA , VG1 = -0.7 V, VG2 = 1.3 V
Parameter
Min
Typical
Max
Operational Frequency Range
2
20
Small Signal Gain
17
Input Return Loss
15
Output Return Loss
14
Output Power at Saturation
22
Output Power at P1dB
19
Output TOI
29
Noise Figure
2
Gain Temperature Coefficient
0.013
Noise Temperature Coefficient
0.009
Units
GHz
dB
dB
dB
dBm
dBm
dBm
dB
dB/°C
dB/°C
Preliminary Datasheet: Rev - 06-21-13
© 2013 TriQuint
- 2 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
 

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