FJV3106R View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

FJV3106R

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

FJV3106R

Switching Application (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R1=10KΩ, R2=47KΩ)

• Complement to FJV4106R

Marking

R26

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

ICBO

hFE

VCE(sat)

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Output Capacitance

IC=10µA, IE=0

IC=100µA, IB=0

VCB=40V, IE=0

VCE=5V, IC=5mA

IC=10mA, IB=0.5mA

VCE=10mA, IE=0

f=1.0MHz

fT

VI(off)

VI(on)

R1

R1/R2

Current Gain Bandwidth Product

Input Off Voltage

Input On Voltage

Input Resistor

Resistor Ratio

VCB=10V, IC=5mA

VCE=5V, IC=100µA

VCE=0.3V, IC=1mA

3

2

1 SOT-23

1. Base 2. Emitter 3. Collector

Equivalent Circuit

C

R1

B

R2

Value

50

50

10

100

200

150

-55 ~ 150

E

Units

V

V

V

mA

mW

°C

°C

Min.

50

50

68

0.3

7

0.19

Typ.

3.7

250

10

0.21

Max.

0.1

Units

V

V

µA

0.3

V

pF

MHz

V

1.4

V

13

KΩ

0.24

©2002 Fairchild Semiconductor Corporation

Rev. A, July 2002

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