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FQA22P10 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQA22P10
Fairchild
Fairchild Semiconductor Fairchild
FQA22P10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
VGS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.5
0.4
V = - 10V
GS
0.3
V = - 20V
GS
0.2
0.1
Note : TJ = 25
0.0
0 10 20 30 40 50 60 70 80 90 100
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
C
iss
C
oss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
175
25
100
10-1
2
-55
Notes :
1.
2.
2V5DS0μ=s-4P0uVlse
Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
17525
Notes :
1. V =0V
2. 25G0Sμ s Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -20V
10
DS
V = -50V
DS
8
V = -80V
DS
6
4
2
Note : ID = -22 A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. C2, August 2002
 

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