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IRFP360 View Datasheet(PDF) - Intersil

Part Name
Description
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IRFP360 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFP360
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
G
MIN TYP MAX UNITS
-
-
23
A
D
-
-
92
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = 23A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 25A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 25A, dISD/dt = 100A/µs
-
-
1.8
V
200 460 1000
ns
3.1
7.1
16
µC
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4mH, RG = 25Ω, Peak IAS = 23A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.1 0.2
0.1
0.05
10-2
0.02
0.01
10-3
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
4-343
 

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