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IRFP360 View Datasheet(PDF) - New Jersey Semiconductor

Part NameDescriptionManufacturer
IRFP360 Avalanche-Energy-Rated N-Channel Power MOSFETs NJSEMI
New Jersey Semiconductor NJSEMI
IRFP360 Datasheet PDF : 2 Pages
1 2
IRFP360, IRFP362
ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
Parameter
Type
Mm
Typ.
Max
Units
Tesi Conditions
BVDSS
Drain-to-Source Breakdown Voltage IRFP380
400
IHFP362
RDS(on) Static Drain-to-Source
On-State Resistance CD
IRFP360
IRFP362
-
'D(on)
On-Stale Dram Current @
IRFP3SO
23
IRFP362
20
vGS(th) O*« Threshold Voltage
ALL
2.0
9(5
Forward Transconductance (3)
ALL
14
-
0.18
0.20
-
-
21
-
020
0.25
-
4.0
-
V
VQS - 0V. ID - 2SOMA
Q VQS . iov. ID - ISA
A
V
S(D)
VDS> !D(on) x RDS<on)M«
VGS - 10V
VDS - VGS- 'D - 25°MA
VDS £ 50V, IDS - 13A
'OSS
Zef° Gat* VottAfl* Drain Current
-
-
250
VDS - Max Rating. VGS - 0V
ALL
-
-
1000
M*
VDS * ° 8 « Ma* Flaling. VQS - 0V. Tj . 12S°C
'CSS
Gate-to-Source Leakage Forward
ALL
-
-
500
nA
VGS - 20V
'GSS
Gale-to-Source Leakage Reverse
ALL
-
-
-500
nA
VGS . -20V
Qg
Total Gate Charge
ALL
-
68
100
nC VQS - iov, ID -25A
Qgs
Gate- to- Source Charge
Qgo-
Gate-to-Drain ("Miller") Charge
ALL
-
17
25
nC
VDS * °8 " Max R'linfl
S«e Fig 16
-
24
36
nC (Indepanden! of operating temperature)
"dfon)
tr
tyoff)
1,
LQ
Turn-On Deiay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
ALL
-
22
33
ns.
VDQ - 200V, ID - 25A, RG - 4 3O
ALL
-
94
140
ns RD - 7.50
ALL
-
80
120
ns See Fig 15
ALL
-
66
99
ns (Independent of operating temperature)
ALL
5.0
nH Measured from the drain Modified MOSFET symbol
lead. 6mm (0.25 in.) from snowing the internal
package to center of die. inductances
_ls
LS
Internal Source Inductance
ALL
13
nH Measured from the source
lead. 6mm (0.25 in.) from
package to source
bonding pad.
M*"* 1
M lpTL '
^V^CX
CiM
C^,
Cry8
R«oc
Rihca
RIUJA
input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Mounting torque
ALL
-
4000
-
PF
VQS - 0V. VDS ' 25V
ALL
-
550
-
PF I - 1.0 MHz
ALL
-
97
pF See Fig 10
ALL
-
-
0.50 •c/w
ALL
0.24
-
•c/w Mounting surface flat, smooth, and greased
ALL
-
40
-C/W Typical socket mount
ALL
-
-
. 10
in.etbs. Standard 6-32 screw
(]) Repetitive Rating; Pulse width limited by
maximum junction temperature (see figure 5)
Refer TO current HEXFET reliability report
® @ VOD » 50V. Starting Tj = 25°C,
L - 4.0mH, RG = 25O. Peak IL » 23A
Pulse width < 300 MS; Duty Cycle 5 2%
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Type
Mar
Typ.
Max.
Units
Test Conditions
(5
'SM
Vso
tfr
QRP
to,,
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Oiode) ®
Oiode Forward Voltage ©
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ALL
-
-
23
ALL
-
-
92
A
Modified MOSFET symbol showing the integral ,- So
Reverse p-n junction rectifier.
/j 1 J\j - 25°C. IS = 23A. VGS = 0V
A
ALL
ALL
ALL
ALL
-
-
1.8
V
200
460
1000
ns
Tj = 250C. IF = 2SA, di/dt - 100 A/us
3.1
7.1
16
MC
Intrinsic turn on time is negligible Turn-on speed is substantially controlled by Lg + LQ.
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