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IRFP360 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
IRFP360 N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
IRFP360 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP360
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 13A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD
Forward On-Voltage
IS= 23A; VGS= 0
MIN MAX UNIT
400
V
2
4
V
0.2
Ω
±100
nA
250
μA
1.8
V
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