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IRF1407STRLPBF View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
IRF1407STRLPBF HEXFET® Power MOSFET Infineon
Infineon Technologies Infineon
IRF1407STRLPBF Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50
75
100
125
150
175
TC, Case Temperature
( °C)
IRF1407S/LPbF
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty f actor D =
t1/t 2
2. Peak T J = P DM x Z thJC
+T C
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-26
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