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D0592A-2003 データシートの表示(PDF) - Panasonic Corporation

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D0592A(2003) Silicon NPN epitaxial planer type Panasonic
Panasonic Corporation Panasonic
D0592A Datasheet PDF : 4 Pages
1 2 3 4
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
60
V
Collector-emitter voltage (Base open) VCEO
50
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
60
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 500 mA
85
hFE2 VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
Typ Max
0.1
340
0.2 0.4
0.85 1.20
200
20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170 120 to 240 170 to 340
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00189CED
1
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