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IRFW520A View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFW520A Advanced Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFW520A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Advanced Power MOSFET
IRFW/I520A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.155 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TA=25ΟC ) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.2
ID = 9.2 A
D2-PAK I2-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Value
100
9.2
6.5
37
+_ 20
113
9.2
4.5
6.5
3.8
45
0.3
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
R θ JA
RθJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.31
40
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
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