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FSB660A Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de piezacomponentes Descripciónfabricante
FSB660A PNP Low Saturation Transistor Fairchild
Fairchild Semiconductor Fairchild
FSB660A Datasheet PDF : 4 Pages
1 2 3 4
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
1.4
β = 10
1.2
1
- 40°C
0.8
0.6
25°C
0.4
125°C
0.2
0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Base-Emitter On Voltage vs.
Collector Current
1.6
Vce = 2.0V
1.4
1.2
1
- 40°C
0.8
0.6
25°C
0.4
125°C
0.2
0.0001 0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.7
0.6
125°C
0.5
25°C
0.4
0.3
- 40°C
0.2
0.1
0
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Input/Output Capacitance vs.
Reverse Bias Voltage
400
f V=ce1=.02M.0HVz
350
Cobo
300
250
200
150
C ibo
100
50
0
0.1
0.5 1
10 20 50 100
V CE - COLLECTOR VOLTAGE (V)
Current Gain vs. Collector Current
1000
900
125°C
Vce = 2.0V
800
700
600
25°C
500
400
300
- 40°C
200
100
0
0.0001 0.001 0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
FSB660/FSB660A Rev. B1
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