FSB660A View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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| FSB660A Datasheet PDF : 0 Pages | |||
PNP Low Saturation Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, TA=100°C
VEB = 4V
60
V
60
V
5
V
100 nA
10 uA
100 nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100 mA, VCE = 2 V
IC=500mA, VCE =2V FSB660
FSB660A
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
IC = 1 A, IB = 100 mA
IC = 2 A, IB=200 mA FSB660
FSB660A
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
70
-
100 300
250 550
80
40
300 mV
350
300
1.25 V
1
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
fT
Transition Frequency
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, IE = 0, f = 1MHz
30
pF
IC = 100 mA,VCE = 5 V, f=100MHz 75
-
FSB660/FSB660A Rev. B1
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