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FSBCW30 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FSBCW30
Fairchild
Fairchild Semiconductor Fairchild
FSBCW30 Datasheet PDF : 5 Pages
1 2 3 4 5
Discrete POWER & Signal
Technologies
FSBCW30
C
E
B
SuperSOTTM-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
32
VCBO
Collector-Base Voltage
32
VEBO
Emitter-Base Voltage
5.0
IC
Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in2 of 2oz copper.
Max
FSBCW30
500
4
250
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
© 1998 Fairchild Semiconductor Corporation
FSBCW30, Rev B
 

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