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BF258-BF259 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
View to exact match
BF258-BF259
NJSEMI
New Jersey Semiconductor NJSEMI
BF258-BF259 Datasheet PDF : 3 Pages
1 2 3
BF257-BF258-BF259
THERMAL DATA
Rth j-case Thermal Resistance Junction-case
°th j-amb Thermal Resistance Junction-ambient
Max
30
"CM/
Max
175
•CIW
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO Collector Cutoff Current
(IE = 0)
forBF257
for BF258
for BF259
VCB = 100V
VCB = 200 V
VCB = 250 V
V(BR) CBO
Collector-base
Breakdown Voltage
(IE=0)
lc=100|jA
for BF257
forBF258
for BF259
V(BR)CEO* Collector-emitter
Breakdown Voltage
(lB = 0)
lc = 10mA
for BF257
forBF258
for BF259
V(BR) EBO
Emittter-base
Breakdown Voltage
dc=0)
IE = 100uA
VCE (sat)* Collector-emitter
Saturation Voltage
Ic =30 mA IB =6 mA
hF£*
fy
Cre
DC Current Gain
Transition Frequency
Reverse Capacitance
lc=30mA
lc = 15mA
lc=0
f = 1 MHz
VCE= 10V
VCE = 10V
VCE = 30V
* Pulsed : pulse duration = 300 us, duty cycle 1 %.
Min. Typ.
160
250
300
160
250
300
5
25
90
3
DC Current Gain.
«.
hFE
Max.
50
50
50
1
Unit
nA
nA
nA
V
V
V
V
V
V
V
V
MHz
PF
BO
at
02
Ic(mA)
 

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