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BA779 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
BA779
Vishay
Vishay Semiconductors Vishay
BA779 Datasheet PDF : 5 Pages
1 2 3 4 5
BA779/BA779S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 20 mA
Reverse current
VR = 30 V
Diode capacitance
f = 100 MHz, VR = 0
Differential forward resistance f = 100 MHz, IF = 1.5 mA
Reverse impedance
f = 100 MHz, VR = 0
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Part
Symbol
Min
VF
IR
CD
rf
BA779
zr
5
BA779S
zr
9
τ
Typ.
Max
Unit
1000
mV
50
nA
0.5
pF
50
Ω
kΩ
kΩ
4
µs
20
Π - Circuit with 10 dB Attenuation
0
V0 = 40 dBmV
f1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0
20
40
60
80
95 9733 f2 , modulated with 200 kHz, m = 100 % (MHz)
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2
10000
1000
100
f > 20 MHz
Tj = 25 °C
10
1
0.001 0.01
0.1
1
10
95 9734
IF - Forward Current (mA)
Figure 2. Differential Forward Resistance vs. Forward Current
www.vishay.com
2
Document Number 85532
Rev. 1.7, 19-Feb-07
 

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