FQPF1P50 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

FQPF1P50

500V P-Channel MOSFET

Fairchild Semiconductor 

FQPF1P50

500V P-Channel MOSFET

December 2000

QFETTM

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize

on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for electronic lamp ballasts based on the

complementary half bridge topology.

Features

• -1.03A, -500V, RDS(on) = 10.5Ω @VGS = -10 V

• Low gate charge ( typical 11 nC)

• Low Crss ( typical 6.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

GD S

TO-220F

FQPF Series

G!

S

!

●

●

▶▲

●

!

D

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

FQPF1P50

-500

-1.03

-0.65

-4.12

± 30

110

-1.03

2.8

-4.5

28

0.22

-55 to +150

300

Typ

Max

--

4.46

--

62.5

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

©2000 Fairchild Semiconductor International

Rev. A2, December 2000

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