FQD7P06 View Datasheet(PDF) - Fairchild Semiconductor
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FQD7P06 Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
101
V
GS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.4
1.2
1.0
V = - 10V
GS
0.8
V = - 20V
GS
0.6
0.4
0.2
※ Note : T = 25℃
J
0.0
0
4
8
12
16
20
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
400
300
200
100
0
10-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150℃
100
25℃
10-1
2
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8
V = -48V
DS
6
4
2
※ Note : ID = -7.0 A
0
0
1
2
3
4
5
6
7
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001
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