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BDW83A View Datasheet(PDF) - Comset Semiconductors

Part Name
Description
View to exact match
BDW83A
Comset
Comset Semiconductors Comset
BDW83A Datasheet PDF : 3 Pages
1 2 3
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDW83 45
VCEO(SUS)
Collector-Emitter Sustaining IC=30 mA
Voltage (*)
IB=0
BDW83A 60
BDW83B 80
BDW83C 100
BDW83D 120
ICEO
ICBO
IEBO
hFE
VCE(SAT)
VBE(on)
VEC
IB=0, VCE=30 V BDW83
IB=0, VCE=30 V BDW83A
Collector Cutoff Current
IB=0, VCE=40 V BDW83B -
IB=0, VCE=50 V BDW83C
IB=0, VCE=60 V BDW83D
IE= 0, VCB=45 V BDW83
IE= 0, VCB=60 V BDW83A
IE= 0, VCB=80 V BDW83B -
IE= 0, VCB=100 V BDW83C
IE= 0, VCB=120 V BDW83D
IE= 0, VCB=45 V
Tcase = 150°C
BDW83
Collector Cutoff Current
IE= 0, VCB=60 V
Tcase = 150°C
BDW83A
IE= 0, VCB=80 V
Tcase = 150°C
BDW83B
-
IE= 0, VCB=100 V
Tcase = 150°C
BDW83C
IE= 0, VCB=120 V
Tcase = 150°C
BDW83D
Emitter Cutoff Current
VEB=5.0 V, IC=0
-
DC Current Gain (*)
IC=6 A , VCE=3.0 V
IC=15 A , VCE=3.0 V
750
100
Collector-Emitter saturation IC=6 A , IB=12 mA
-
Voltage (1)
IC=15 A , IB=150 mA
-
Base-Emitter Voltage (*)
IC=6 A , IB=3 A
-
Parallel Diode Forward
Voltage
IE = 15 A , IE= 0
-
ton
Turn-on time
IC = 10 A,
-
IB1 =-IB2=40 mA
toff
Turn-off time
RL=3; VBE(off) = -4.2V
-
Duty Cycle2%
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
-
-
-
-
-
-
V
-
-
-
-
-
1 mA
- 0.5
mA
-
5
-
2 mA
-
-
20 K
-
-
- 2.5
-
4
V
- 2.5
- 3.5 V
0.9 -
µs
7
-
23/10/2012
COMSET SEMICONDUCTORS
2|3
 

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