BDW83B View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
View to exact match
BDW83B Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDW83/83A/83B/83C/83D
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
BDW83
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
BDW83A
BDW83B IC=30mA, IB=0
BDW83C
BDW83D
VCEsat-1 Collector-emitter saturation voltage IC=6A ,IB=12mA
VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA
VBE
Base-emitter on voltage
IC=6A ; VCE=3V
ICBO
Collector
cut-off current
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCB=45V, IE=0
TC=150
VCB=60V, IE=0
TC=150
VCB=80V, IE=0
TC=150
VCB=100V, IE=0
TC=150
VCB=120V, IE=0
TC=150
BDW83
VCE=30V, IB=0
ICEO
Collector
cut-off current
BDW83A VCE=30V, IB=0
BDW83B VCE=40V, IB=0
BDW83C VCE=50V, IB=0
BDW83D VCE=60V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=6A ; VCE=3V
hFE-2
DC current gain
IC=15A ; VCE=3V
VEC
Diode forward voltage
IE=15A
ton
Turn-on time
toff
Turn-off time
IC = 10 A, IB1 =-IB2=40 mA
RL=3B; VBE(off) = -4.2V
Duty CycleC2%
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
2
MIN TYP. MAX UNIT
45
60
80
V
100
120
2.5
V
4.0
V
2.5
V
0.5
5.0
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1
mA
2
mA
750
20000
100
3.5
V
0.9
µs
7.0
µs
MAX
0.83
UNIT
/W
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