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BDW84C-1997 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BDW84C(1997) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ST-Microelectronics
STMicroelectronics ST-Microelectronics
BDW84C Datasheet PDF : 4 Pages
1 2 3 4
BDW83C / BDW84C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.96
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 100 V
VCB = 100 V
Tcase = 150 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
VCE = 40 V
VEB = 5 V
IC = 30 mA
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 6 A
IC = 15 A
IB = 12 mA
IB = 150 mA
VBE(on)Base-Emitter Voltage IC = 6 A
VCE = 3 A
hFEDC Current Gain
IC = 6 A
IC = 15 A
VCE =3 V
VCE =3 V
Vf*
Diode Forward Voltage IF = 10 A
ton
Turn-on Time
VCC = 30 V
IC = 10 A
toff
Turn-off Time
RB1 = 300
RB2 = 150
IB1 = - IB2 = 40 mA
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Min.
Typ.
Max.
500
5
1
Unit
µA
mA
mA
2
mA
100
V
2.5
V
4
2.5
V
750
20000
100
4
V
0.9
µs
6
µs
2/4
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