KD1414 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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KD1414

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

KTD1414

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 3A

·High DC Current Gain

: hFE= 2000(Min) @ IC= 1A, VCE= 2V

APPLICATIONS

·Switching applications

·Hammer driver,pulse motor driver applications

·Power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.5

A

25

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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