NXP Semiconductors
NPN general purpose transistors
Product data sheet
BCW31; BCW32; BCW33
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BCW31
BCW32
BCW33
DC current gain
BCW31
BCW32
BCW33
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
CONDITIONS
IE = 0; VCB = 32 V
IE = 0; VCB = 32 V; Tj = 100 °C
IC = 0; VEB = 5 V
IC = 10 μA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 2 mA; VCE = 5 V
IE = Ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
IC = 200 μA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
MIN.
−
−
−
−
−
−
110
200
420
−
−
−
−
550
−
100
−
TYP.
−
−
−
190
330
600
−
−
−
120
210
750
850
−
2.5
−
−
MAX.
100
10
100
−
−
−
220
450
800
250
−
−
−
700
−
−
10
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
2004 Feb 06
3