BCW32 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
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BCW32 Datasheet PDF : 3 Pages
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BCW31 BCW32
BCW33
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
IC = 2 mA
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient*
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 32 V
IE = 0; VCB = 32 V; Tj = 100 °C
Base–emitter voltage
IC = 2 mA; VCE = 5 V
Saturation voltages
IC = 10 mA; lB = 0,5 mA
IC: 50 mA; lB: 2,5 mA
D.C. current gain
IC = 10 mA, VCE = 5 V
hFE
IC = 2 mA; VCE = 5 V
hFE
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 10 V
Cc
Transition frequency at f = 35 MHz
IC = 10 mA; VCE = 5 V
fT
Noise figure at RS = 2 kW
IC = 200mA; VCE = 5 V
f = 1 kHz; B = 200 Hz
F
VCB0 max. 32 V
VCE0
VEB0
IC
ICM
Ptot
Tstg
Tj
max. 32 V
max. 5 V
max. 100 mA
max. 200 mA
max. 250 mW
–55 to +150 °C
max. 150 °C
Rth j–a =
500 K/W
ICB0 <
ICB0 <
100 nA
10 mA
VBE 550 to 700 mV
typ.
VCEsat <
VBEsat typ.
120 mV
250 mV
750 mV
VCEsat typ.
VBEsat typ.
210 mV
850 mV
BCW31 BCW32 BCW33
typ. 90 150 270
>
110 200 420
<
220 450 800
typ.
2,5 pF
typ.
300 MHz
<
10 dB
Continental Device India Limited
Data Sheet
Page 2 of 3
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