BCW33 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
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BCW33 Datasheet PDF : 3 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW31 BCW32
BCW33
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
BCW31 = Dl
BCW32 = D2
BCW33 = D3
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C
IC = 2 mA; VCE = 5 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to
Tamb = 25 °C
Junction temperature
Transition frequency at f = 35 MHz
IC = 2 mA; VCE = 5 V
Noise figure at RS = 2 kW
IC = 200 mA; VCE = 5 V;
f = 1 kHz; B = 200 Hz
hFE
VCB0
VCE0
ICM
BCW31 BCW32 BCW33
>
110 200 420
<
220 450 800
max.
32
V
max.
32
V
max.
200
mA
Ptot max.
Tj
max.
250
mW
150
°C
fT
typ.
300
MHz
F
<
10
dB
Continental Device India Limited
Data Sheet
Page 1 of 3
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