SMD Type
Transistors
NPN Transistors
BCW31~BCW33 (KCW31~KCW33)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
BCW31
BCW32
BCW33
DC current gain
BCW31
BCW32
BCW33
Collector output capacitance
Noise figure
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA, IE= 0
VCEO Ic= 2 mA, IB= 0
VEBO IE= 100μA, IC= 0
ICBO
VCB= 32 V , IE= 0
VCB= 32 V , IE= 0,TJ=100℃
IEBO VEB= 5V , IC=0
IC=10 mA, IB=0.5mA
VCE(sat)
IC=50 mA, IB=2.5mA
IC=10 mA, IB=0.5mA
VBE(sat)
IC=50 mA, IB=2.5mA
VBE VCE= 5V, IC= 2mA
VCE= 5V, IC= 10uA
hFE
VCE= 5V, IC= 2mA
Cc VCB= 10V,IE=Ie=0,f=10MHz
NF
IC = 200 u A; VCE = 5 V;
RS = 2kΩ;f = 1 kHz; B = 200 Hz
fT
VCE= 5V, IC= 10mA,f=100MHz
Min Typ Max Unit
32
32
V
5
100 nA
10 uA
100 nA
120 250
210
750
mV
850
550
700
90
150
270
110
220
200
450
420
800
2.5
pF
10 dB
100
MHz
■ Classification of hfe(2)
Type
BCW31
Range
110-220
Marking
D1*
BCW32
200-450
D2*
BCW33
420-800
D3*
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