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BCW30 View Datasheet(PDF) - Zetex => Diodes

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Description
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BCW30 Datasheet PDF : 1 Pages
1
SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 3 - JULY 1995
BCW29
BCW30
PARTMARKING DETAILS – BCW29 - C1
BCW30 - C2
BCW29R - C4
BCW30R - C5
E
C
B
COMPLEMENTARY TYPES – BCW29 - BCW31
BCW30 - BCW32
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-30
V
-30
V
-20
V
-5
A
-100
A
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base - Emitter Voltage
VBE
Collector-Emitter Saturation VCE(SAT)
Voltage
Base-Emitter Saturation
Voltage
VBE(SAT)
Collector- Base Cut-Off
ICBO
Current
Static Forward
Current
Transfer
Ratio
BCW29 hFE
BCW30 hFE
Transition Frequency
fT
-600
120
215
-80
-150
-720
-810
90
150
150
-750
250
-100
-10
260
500
mV
mV
mV
mV
mV
nA
µA
MHz
IC=-2mA, VCE =- 5V
IC=-10mA, IB = - 0.5mA
IC=-50mA, IB =-2.5mA
IC=-10mA, IB=-0.5mA
IC =-50mA, IB=-2.5mA
IE=0, VCB=-20V
ITEj==01,0V0CoBC=-20V,
IC=-10µA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-10µA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
f = 35MHz
Collector Capacitance
CTC
7
pF
IE =Ie =0, VCB =-10V
f= 1MHz
Noise Figure
N
10
dB
IC= -200mA, VCE =-5V
RS =2K, f=1KHz
B= 200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for this device
 

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