MT49H16M16(2002) View Datasheet(PDF) - Micron Technology

Part Name

Description

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MT49H16M16
(Rev.:2002)

REDUCED LATENCY DRAM (RLDRAM®)

Micron Technology 

1

CK/CK#

CS#, AS#, REF#,

A[18:0], BA[2:0],

DM[1:0]

WB0

DQ

ADVANCE

256Mb: x16, x32

2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM

WRITE TIMING

(BL = 4, RL = 6)

2

3

4

5

6

7

8

9

WB1

WB2

tRC = 8 tCK

WB3

WB0

D0a D0b D0c D0d D1a D1b D1c D1d D2a D2b D2c D2d D3a D3b D3c D3d

NOTE: 1. DQS and DQS# are not relevant during WRITE cycles.

2. Starting with all banks closed, 4 banks cyclic access.

3. Write latency WL = RL - BL/2 - 2 = 2.

256: x16, x32 RLDRAM

MT49H8M32_3.p65 – Rev. 3, Pub. 6/02

27

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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