MT49H16M16(2002) View Datasheet(PDF) - Micron Technology

Part Name

Description

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MT49H16M16
(Rev.:2002)

REDUCED LATENCY DRAM (RLDRAM®)

Micron Technology 

1

CK/CK#

CS#, AS#, REF#,

A[18:0], BA[2:0]

RB0

DQS,

DQS#

DVLD

DQ

ADVANCE

256Mb: x16, x32

2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM

READ TIMING

(BL = 4)

2

3

4

5

6

7

8

9

RB1

RB3

RL = 5 tCK

RB4

RB0

tRC = 8 tCK

initial

Q0a

Q0a Q0b Q0c Q0d Q1a Q1b Q1c Q1d

NOTE: 1. Starting with all banks closed, 4 bank cyclic access.

2. 4 bit prefetch, BL = 4.

3. Read latency (RL) programmable.

4. CS# = 1 deactivates command inputs. DQS not affected.

256: x16, x32 RLDRAM

MT49H8M32_3.p65 – Rev. 3, Pub. 6/02

25

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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